Catalog
100V 12.5A, Dual Nch+Nch, HSMT8, Power MOSFET
Description
AI
HT8KE6H is a power MOSFET with low on-resistance and High power small mold package, suitable for Switching and Motor drives applications.
100V 12.5A, Dual Nch+Nch, HSMT8, Power MOSFET
| Part | Operating Temperature | Drain to Source Voltage (Vdss) | Rds On (Max) | Gate Charge (Max) | Channel Count | Configuration | Configuration - Features | Input Capacitance (Ciss) (Max) | Package Length | Package Name | Package Width | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Power - Max (Tc) | Power - Max (Ta) | Package / Case | Mounting Type | Technology | Vgs(th) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 150 °C | 100 V | 60 mOhm | 6.3 nC | 2 | N-Channel | Dual | 320 pF | 3.2 mm | 8-HSMT | 3 mm | 4.5 A | 12.5 A | 14 W | 2 W | 8-PowerVDFN | Surface Mount | MOSFET (Metal Oxide) | 4 V |