ZENER DIODE SINGLE 2-PIN 6.8V, 5%, 3.5OHM, 1000MW DO-41 BAG
| Part | Voltage - Zener (Nom) (Vz) | Voltage - Forward (Vf) (Max) @ If | Tolerance | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Qualification | Impedance (Max) (Zzt) [Max] | Grade | Mounting Type | Package / Case | Power - Max [Max] | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology JANTX1N3016B-1 | 6.8 V | 1.2 V | 5 % | -55 °C | 347 °F | DO-204AL (DO-41) | MIL-PRF-19500/124 | 3.5 Ohms | Military | Through Hole | Axial, DO-204AL, DO-41 | 1 W | 150 µA |
Microchip Technology 1N3016B-1 | |||||||||||||
Microchip Technology JAN1N3016D-1 | 6.8 V | 1.2 V | 1 % | -55 °C | 347 °F | DO-204AL (DO-41) | MIL-PRF-19500/115 | 3.5 Ohms | Military | Through Hole | Axial, DO-204AL, DO-41 | 1 W | 150 µA |
Microchip Technology JAN1N3016C-1 | 6.8 V | 1.2 V | 5 % | -55 °C | 347 °F | DO-41 | MIL-PRF-19500/115 | 3.5 Ohms | Military | Through Hole | Axial, DO-204AL, DO-41 | 1 W | 150 µA |
Microchip Technology 1N3016BE3 | |||||||||||||
Microchip Technology 1N3016B-1/TR | |||||||||||||
Microchip Technology 1N3016B-1E3 | 6.8 V | 1.2 V | 5 % | -55 °C | 175 ░C | DO-204AL (DO-41) | 3.5 Ohms | Through Hole | Axial, DO-204AL, DO-41 | 1 W | 150 µA | ||
Microchip Technology 1N3016B-1E3 | |||||||||||||
Microchip Technology JAN1N3016CUR-1 | 6.8 V | 1.2 V | 2 % | -55 °C | 347 °F | DO-213AB (MELF, LL41) | MIL-PRF-19500/115 | 3.5 Ohms | Military | Surface Mount | DO-213AB, MELF (Glass) | 1 W | 150 µA |
Microchip Technology JANTX1N3016DUR-1 | |||||||||||||
Microchip Technology JANTXV1N3016C-1 | |||||||||||||
Microchip Technology JANTXV1N3016C-1 | 6.8 V | 1.2 V | 2 % | -55 °C | 347 °F | DO-41 | MIL-PRF-19500/115 | 3.5 Ohms | Military | Through Hole | Axial, DO-204AL, DO-41 | 1 W | 150 µA |
Microchip Technology JANTXV1N3016DUR-1 | 6.8 V | 1.2 V | 1 % | -55 °C | 347 °F | DO-213AB (MELF, LL41) | MIL-PRF-19500/115 | 3.5 Ohms | Military | Surface Mount | DO-213AB, MELF (Glass) | 1 W | 150 µA |
Microchip Technology 1N3016BUR-1 | |||||||||||||
Microchip Technology 1N3016B-1/TR | 6.8 V | 1.2 V | 5 % | -55 °C | 347 °F | DO-204AL (DO-41) | 3.5 Ohms | Through Hole | Axial, DO-204AL, DO-41 | 1 W | 150 µA | ||
Microchip Technology 1N3016BUR-1 | 6.8 V | 1.2 V | 5 % | -55 °C | 347 °F | DO-213AB | 3.5 Ohms | Surface Mount | DO-213AB, MELF | 1 W | 150 µA | ||
Microchip Technology JANTX1N3016DUR-1 | 6.8 V | 1.2 V | 1 % | -55 °C | 347 °F | DO-213AB (MELF, LL41) | MIL-PRF-19500/115 | 3.5 Ohms | Military | Surface Mount | DO-213AB, MELF (Glass) | 1 W | 150 µA |
Microchip Technology JAN1N3016CUR-1 | |||||||||||||
Microchip Technology 1N3016B-1 | 6.8 V | 1.2 V | 5 % | -55 °C | 347 °F | DO-204AL (DO-41) | 3.5 Ohms | Through Hole | Axial, DO-204AL, DO-41 | 1 W | 150 µA | ||
Microchip Technology 1N3016BE3 | 6.8 V | 1.5 V | 5 % | -65 °C | 175 ░C | DO-13 (DO-202AA) | 3.5 Ohms | Through Hole | Axial, DO-13, DO-202AA | 1 W | 150 µA |