GB10MPS17 Series
Manufacturer: GeneSiC Semiconductor
DIODE SIL CARB 1.7KV 50A TO247-2
| Part | Voltage - Forward (Vf) (Max) | Technology | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage | Mounting Type | Package Name | Package / Case | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Current - Average Rectified (Io) | Capacitance | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1.8 V | SiC (Silicon Carbide) Schottky | 0 ns | 1700 V | 12 µA | Through Hole | TO-247-2 | TO-247-2 | 175 °C | -55 °C | 50 A | 669 pF | |||
GeneSiC Semiconductor | 1.8 V | SiC (Silicon Carbide) Schottky | 0 ns | 1700 V | 12 µA | Through Hole | TO-247-2 | TO-247-2 | 175 °C | -55 °C | 50 A | 669 pF | 500 mA | No Recovery Time | 500 mA 500 mA |