GF1 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO214BA
| Part | Current - Average Rectified (Io) | Technology | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) | Mounting Type | Package / Case | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Speed - Recovery Time | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 1 A | Standard | 2 µs | 1.1 V | Surface Mount | DO-214BA | 100 V | 5 µA | 175 °C | -65 °C | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | DO-214BA (GF1) |
Vishay General Semiconductor - Diodes Division | 1 A | Standard | 2 µs | 1.2 V | Surface Mount | DO-214BA | 1 kV | 5 µA | 175 °C | -65 °C | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | DO-214BA (GF1) |
Vishay General Semiconductor - Diodes Division | 1 A | Standard | 2 µs | 1.2 V | Surface Mount | DO-214BA | 1 kV | 5 µA | 175 °C | -65 °C | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | DO-214BA (GF1) |
Vishay General Semiconductor - Diodes Division | 1 A | Standard | 2 µs | 1.1 V | Surface Mount | DO-214BA | 600 V | 5 µA | 175 °C | -65 °C | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | DO-214BA (GF1) |
Vishay General Semiconductor - Diodes Division | 1 A | Standard | 2 µs | 1.1 V | Surface Mount | DO-214BA | 400 V | 5 µA | 175 °C | -65 °C | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | DO-214BA (GF1) |
Vishay General Semiconductor - Diodes Division | 1 A | Standard | 2 µs | 1.1 V | Surface Mount | DO-214BA | 600 V | 5 µA | 175 °C | -65 °C | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | DO-214BA (GF1) |
Vishay General Semiconductor - Diodes Division | 1 A | Standard | 2 µs | 1.1 V | Surface Mount | DO-214BA | 100 V | 5 µA | 175 °C | -65 °C | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | DO-214BA (GF1) |
Vishay General Semiconductor - Diodes Division | 1 A | Standard | 2 µs | 1.1 V | Surface Mount | DO-214BA | 400 V | 5 µA | 175 °C | -65 °C | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | DO-214BA (GF1) |
Vishay General Semiconductor - Diodes Division | 1 A | Standard | 2 µs | 1.1 V | Surface Mount | DO-214BA | 100 V | 5 µA | 175 °C | -65 °C | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | DO-214BA (GF1) |
Vishay General Semiconductor - Diodes Division | 1 A | Standard | 2 µs | 1.2 V | Surface Mount | DO-214BA | 1 kV | 5 µA | 175 °C | -65 °C | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | DO-214BA (GF1) |