IR21834 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 14DIP

Part	Current - Peak Output (Source)	Current - Peak Output (Sink)	Package Length	Package Name	Package Width	Driven Configuration	Input Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Number of Drivers	Gate Channel	Gate Type	Mounting Type	Logic Voltage - VIL	Logic Voltage - VIH	Channel Type	High Side Voltage - Max (Bootstrap)	Rise Time (Typ)	Fall Time (Typ)	Operating Temperature (Min)	Operating Temperature (Max)
INFINEON IR21834PBF	1.9 A	2.3 A	0.3 in	14-DIP	7.62 mm	Half-Bridge	Inverting Non-Inverting	10 VDC	20 V	2	N-Channel	IGBT MOSFET N-Channel MOSFET	Through Hole	0.8 V	2.7 V	Independent	600 V	40 ns	20 ns	-40 °C	150 °C
INFINEON IR21834	1.9 A	2.3 A	0.3 in	14-DIP	7.62 mm	Half-Bridge	Inverting Non-Inverting	10 VDC	20 V	2	N-Channel	IGBT MOSFET N-Channel MOSFET	Through Hole	0.8 V	2.7 V	Independent	600 V	40 ns	20 ns	-40 °C	150 °C
INFINEON IR21834STR	1.9 A	2.3 A	0.154 in	14-SOIC	3.9 mm	Half-Bridge	Inverting Non-Inverting	10 VDC	20 V	2	N-Channel	IGBT MOSFET N-Channel MOSFET	Surface Mount	0.8 V	2.7 V	Independent	600 V	40 ns	20 ns	-40 °C	150 °C
INFINEON IR21834PBF
INFINEON IR21834SPBF	1.9 A	2.3 A	0.154 in	14-SOIC	3.9 mm	Half-Bridge	Inverting Non-Inverting	10 VDC	20 V	2	N-Channel	IGBT MOSFET N-Channel MOSFET	Surface Mount	0.8 V	2.7 V	Independent	600 V	40 ns	20 ns	-40 °C	150 °C
INFINEON IR21834STRPBF	1.9 A	2.3 A	0.154 in	14-SOIC	3.9 mm	Half-Bridge	Inverting Non-Inverting	10 VDC	20 V	2	N-Channel	IGBT MOSFET N-Channel MOSFET	Surface Mount	0.8 V	2.7 V	Independent	600 V	40 ns	20 ns	-40 °C	150 °C