STB45N50DM2AG Series

Automotive-grade N-channel 500 V, 0.07 Ohm typ., 35 A MDmesh DM2 Power MOSFET in a D2PAK package

Catalog

Automotive-grade N-channel 500 V, 0.07 Ohm typ., 35 A MDmesh DM2 Power MOSFET in a D2PAK package

Part	Supplier Device Package	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Vgs (Max)	Grade	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STB45N50DM2AG	TO-263 (D2PAK)	AEC-Q101	2600 pF	5 V	250 W	84 mOhm	N-Channel	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	25 V	Automotive	500 V	MOSFET (Metal Oxide)	10 V	57 nC	35 A

Catalog

Automotive-grade N-channel 500 V, 0.07 Ohm typ., 35 A MDmesh DM2 Power MOSFET in a D2PAK package

Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.