TP65H480 Series

Catalog

GALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 3.6 A, 0.56 OHM, 9 NC, QFN, SURFACE MOUNT

Part	Rds On (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Package Name	Package Length	Package Width	Gate Charge (Max)	Package / Case	Technology	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation TP65H480G4JSG-TR	560 mOhm	13.2 W	760 pF	Surface Mount	3-PQFN	5 mm	6 mm	9 nC	3-PowerTDFN	GaNFET (Cascode Gallium Nitride FET)	3.6 A	8 V	2.8 V	-55 °C	150 °C	18 V	N-Channel	650 V
Renesas Electronics Corporation TP65H480G4JSG-TR	560 mOhm	13.2 W	760 pF	Surface Mount	3-PQFN	5 mm	6 mm	9 nC	3-PowerTDFN	GaNFET (Cascode Gallium Nitride FET)	3.6 A	8 V	2.8 V	-55 °C	150 °C	18 V	N-Channel	650 V