IHD660 Series
Manufacturer: POWER INTEGRATIONS
IC GATE DRVR HALF-BRIDGE MODULE
| Part | Gate Type | Mounting Type | Channel Type | Fall Time (Typ) | Rise Time (Typ) | Driven Configuration | Input Type | Number of Drivers | Operating Temperature (Max) | Operating Temperature (Min) | Package Name | Package Leads | Gate Channel | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
POWER INTEGRATIONS | IGBT MOSFET N-Channel MOSFET | Through Hole | Independent | 80 ns | 100 ns | Half-Bridge | Non-Inverting | 2 | 85 °C | -40 °C | 36-DIP Module Module | 24 Leads | N-Channel | 16 V | 14 V |
POWER INTEGRATIONS | IGBT MOSFET N-Channel MOSFET | Through Hole | Independent | 80 ns | 100 ns | Half-Bridge | Inverting | 2 | 85 °C | -40 °C | 36-DIP Module Module | 24 Leads | N-Channel | 16 V | 14 V |
POWER INTEGRATIONS | IGBT MOSFET N-Channel MOSFET | Through Hole | Independent | 80 ns | 100 ns | Half-Bridge | 2 | 85 °C | -40 °C | 36-DIP Module Module | 24 Leads | N-Channel | 16 V | 14 V | |
POWER INTEGRATIONS | IGBT MOSFET N-Channel MOSFET | Through Hole | Independent | 80 ns | 100 ns | Half-Bridge | Inverting | 2 | 85 °C | -40 °C | 36-DIP Module Module | 24 Leads | N-Channel | 16 V | 14 V |
POWER INTEGRATIONS | IGBT MOSFET N-Channel MOSFET | Through Hole | Independent | 80 ns | 100 ns | Half-Bridge | Inverting | 2 | 85 °C | -40 °C | 36-DIP Module Module | 24 Leads | N-Channel | 16 V | 14 V |