MTP10N10EL Series

Power MOSFET 10 Amps, 100 Volts, Logic Level

Catalog

Power MOSFET 10 Amps, 100 Volts, Logic Level

Part	Vgs (Max)	Technology	Package / Case	Input Capacitance (Ciss) (Max)	Mounting Type	Package Name	Rds On (Max)	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Gate Charge (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)
ON Semiconductor MTP10N10ELG	15 V	MOSFET (Metal Oxide)	TO-220-3	1040 pF	Through Hole	TO-220	220 mOhm	100 V	N-Channel	10 A	5 V	2 V	15 nC	1.75 W 40 W	-55 °C	150 °C

Catalog

Power MOSFET 10 Amps, 100 Volts, Logic Level

Key Features

• Avalanche Energy Specified

• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSSand VDS(on)Specified at Elevated Temperature

• Pb-Free Package is Available

Description

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.