SIHB E Series

Catalog

MOSFETS 600V VDS E SERIES D2PAK TO-263

Part	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Vgs (Max)	Package / Case	Vgs(th) (Max)	Gate Charge (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	FET Type	Package Name
Vishay Dale SIHB33N60ET5-GE3	33 A	278 W	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	150 nC	MOSFET (Metal Oxide)	10 V	Surface Mount	600 V	99 mOhm	-55 °C	150 °C	3508 pF	N-Channel	TO-263 (D2PAK)
Vishay Dale SIHB22N60E-E3	21 A	227 W	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	86 nC	MOSFET (Metal Oxide)	10 V	Surface Mount	600 V	180 mOhm	-55 °C	150 °C	1920 pF	N-Channel	TO-263 (D2PAK)
Vishay Dale SIHB065N60E-T1-GE3	40 A	250 W	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5 V	74 nC	MOSFET (Metal Oxide)	10 V	Surface Mount	600 V	65 mOhm	-55 °C	150 °C	2700 pF	N-Channel	TO-263 (D2PAK)
Vishay Dale SIHB12N60E-GE3	12 A	147 W	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	58 nC 58 nC	MOSFET (Metal Oxide)	10 V	Surface Mount	600 V	380 mOhm	-55 °C	150 °C	937 pF	N-Channel	TO-263 (D2PAK)
Vishay Dale SIHB150N60E-GE3	22 A	179 W	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5 V	36 nC 36 nC	MOSFET (Metal Oxide)	10 V	Surface Mount	600 V	158 mOhm 158 mOhm	-55 °C	150 °C	1514 pF	N-Channel	TO-263 (D2PAK)
Vishay Dale SIHB12N50E-GE3	10.5 A	114 W	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	50 nC	MOSFET (Metal Oxide)	10 V	Surface Mount	500 V	380 mOhm	-55 °C	150 °C	886 pF	N-Channel	TO-263 (D2PAK)
Vishay Dale SIHB35N60E-GE3	32 A	250 W	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	132 nC	MOSFET (Metal Oxide)	10 V	Surface Mount	650 V	94 mOhm	-55 °C	150 °C	2760 pF	N-Channel	TO-263 (D2PAK)
Vishay Dale SIHB180N60E-GE3	19 A	156 W	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5 V	33 nC	MOSFET (Metal Oxide)	10 V	Surface Mount	600 V	180 mOhm	-55 °C	150 °C	1085 pF	N-Channel	TO-263 (D2PAK)