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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Operating Temperature (Min) | Operating Temperature (Max) | Package Name | FET Type | Technology | Gate Charge (Max) | Rds On (Max) | Input Capacitance (Ciss) (Max) | Vgs (Max) | Mounting Type | Power Dissipation (Max) | Current - Continuous Drain (Id) (Ta) | Vgs(th) (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Drain to Source Voltage (Vdss) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | -55 °C | 150 °C | DFN0603-3 (SOT8013) | N-Channel | MOSFET (Metal Oxide) | 1 nC | 1.1 Ohm | 32 pF | 20 V | Surface Mount | 4.7 W 300 mW | 500 mA | 2.5 V | 10 V | 4.5 V | 60 V | 0201 (0603 Metric) |