IPI65R Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 650V 13.8A TO262-3

Part	Vgs (Max)	Power Dissipation (Max)	Package Name	FET Type	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) (Tc)	Technology	Vgs(th) (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)
INFINEON IPI65R280E6XKSA1	20 V	104 W	PG-TO262-3-1	N-Channel	280 mOhm	10 V	I2PAK TO-262-3 Long Leads TO-262AA	13.8 A	MOSFET (Metal Oxide)	3.5 V	Through Hole	650 V	-55 °C	150 °C	45 nC	950 pF
INFINEON IPI65R110CFDXKSA1	20 V	277.8 W	PG-TO262-3	N-Channel	110 mOhm	10 V	I2PAK TO-262-3 Long Leads TO-262AA	31.2 A	MOSFET (Metal Oxide)	4.5 V	Through Hole	650 V	-55 °C	150 °C	118 nC	3240 pF 3240 pF
INFINEON IPI65R660CFDXKSA1	20 V	62.5 W	PG-TO262-3	N-Channel	660 mOhm	10 V	I2PAK TO-262-3 Long Leads TO-262AA	6 A	MOSFET (Metal Oxide)	4.5 V	Through Hole	650 V	-55 °C	150 °C	22 nC	615 pF
INFINEON IPI65R310CFDXKSA1	20 V	104.2 W	PG-TO262-3	N-Channel	310 mOhm	10 V	I2PAK TO-262-3 Long Leads TO-262AA	11.4 A	MOSFET (Metal Oxide)	4.5 V	Through Hole	650 V	-55 °C	150 °C	41 nC	1100 pF
INFINEON IPI65R280C6XKSA1	20 V	104 W	PG-TO262-3	N-Channel	280 mOhm	10 V	I2PAK TO-262-3 Long Leads TO-262AA	13.8 A	MOSFET (Metal Oxide)	3.5 V	Through Hole	650 V	-55 °C	150 °C	45 nC	950 pF
INFINEON IPI65R150CFDXKSA1	20 V	195.3 W	PG-TO262-3-1	N-Channel	150 mOhm	10 V	I2PAK TO-262-3 Long Leads TO-262AA	22.4 A	MOSFET (Metal Oxide)	4.5 V	Through Hole	650 V	-55 °C	150 °C	86 nC	2340 pF
INFINEON IPI65R600C6XKSA1	20 V	63 W	PG-TO262-3	N-Channel	600 mOhm	10 V	I2PAK TO-262-3 Long Leads TO-262AA	7.3 A	MOSFET (Metal Oxide)	3.5 V	Through Hole	650 V	-55 °C	150 °C	23 nC	440 pF
INFINEON IPI65R099C6XKSA1	20 V	278 W	PG-TO262-3-1	N-Channel	99 mOhm	10 V	I2PAK TO-262-3 Long Leads TO-262AA	38 A	MOSFET (Metal Oxide)	3.5 V	Through Hole	650 V	-55 °C	150 °C	127 nC	2780 pF
INFINEON IPI65R420CFDXKSA1	20 V	83.3 W	PG-TO262-3	N-Channel	420 mOhm	10 V	I2PAK TO-262-3 Long Leads TO-262AA	8.7 A	MOSFET (Metal Oxide)	4.5 V	Through Hole	650 V	-55 °C	150 °C	32 nC	870 pF