Catalog
NPN power Darlington transistor
Description
AI
The devices are manufactured in planar base island technology with monolithic Darlington configuration.
NPN power Darlington transistor
| Part | Power - Max | Package Name | Current - Collector (Ic) (Max) | Vce Saturation (Max) | DC Current Gain (hFE) (Min) | Transistor Type | Operating Temperature | Mounting Type | Current - Collector Cutoff (Max) | Package / Case | Voltage - Collector Emitter Breakdown (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 40 W | SOT-32-3 | 4 A | 2.5 V | 750 | Darlington NPN | 150 °C | Through Hole | 500 µA | TO-126-3 TO-225AA | 80 V |