Catalog
31 A, 600 V, fast IGBT with UltraFAST diode
Description
AI
This device uses the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
Beta
⌘K
31 A, 600 V, fast IGBT with UltraFAST diode
31 A, 600 V, fast IGBT with UltraFAST diode
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge | Switching Energy | Package / Case | Current - Collector (Ic) (Max) [Max] | Reverse Recovery Time (trr) | Power - Max [Max] | Vce(on) (Max) @ Vge, Ic | Td (on/off) @ 25°C | Test Condition | Current - Collector Pulsed (Icm) | Mounting Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | -55 °C | 150 °C | 53 nC | 85 µJ 189 µJ | TO-247-3 | 52 A | 31 ns | 208 W | 2.5 V | 25 ns 97 ns | 10 Ohm 12 A 15 V 390 V | 60 A | Through Hole | 600 V | TO-247 Long Leads |