GD25LQ20 Series

Manufacturer: GigaDevice Semiconductor (HK) Limited

Catalog

IC FLASH 2MBIT SPI/QUAD 8USON

Part	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Type	Memory Format	Memory Interface	Supplier Device Package	Access Time	Technology	Mounting Type	Memory Organization [custom]	Memory Organization [custom]	Clock Frequency	Memory Size	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case [y]	Package / Case [x]
GigaDevice Semiconductor (HK) Limited GD25LQ20EEIGR	60 µs	2.4 ms	2 V	1.65 V	Non-Volatile	FLASH	SPI - Quad I/O	8-USON (3x2)	6 ns	FLASH - NOR (SLC)	Surface Mount	256 K	8	133 MHz	2 Gbit	85 °C	-40 °C	8-XFDFN Exposed Pad
GigaDevice Semiconductor (HK) Limited GD25LQ20ESIGR	60 µs	2.4 ms	2 V	1.65 V	Non-Volatile	FLASH	SPI - Quad I/O	8-SOP	6 ns	FLASH - NOR (SLC)	Surface Mount	256 K	8	133 MHz	2 Gbit	85 °C	-40 °C	8-SOIC	5.3 mm	0.209 "
GigaDevice Semiconductor (HK) Limited GD25LQ20EEAGR	100 µs	4 ms	2 V	1.65 V	Non-Volatile	FLASH	SPI - Quad I/O	8-USON (3x2)	6 ns	FLASH - NOR (SLC)	Surface Mount	256 K	8	133 MHz	2 Gbit	125 °C	-40 °C	8-XFDFN Exposed Pad
GigaDevice Semiconductor (HK) Limited GD25LQ20ETIGR	60 µs	2.4 ms	2 V	1.65 V	Non-Volatile	FLASH	SPI - Quad I/O	8-SOP	6 ns	FLASH - NOR (SLC)	Surface Mount	256 K	8	133 MHz	2 Gbit	85 °C	-40 °C	8-SOIC	3.9 mm	0.154 in
GigaDevice Semiconductor (HK) Limited GD25LQ20EKIGR	60 µs	2.4 ms	2 V	1.65 V	Non-Volatile	FLASH	SPI - Quad I/O	8-USON (1.5x1.5)	6 ns	FLASH - NOR (SLC)	Surface Mount	256 K	8	133 MHz	2 Gbit	85 °C	-40 °C	8-XFDFN Exposed Pad
GigaDevice Semiconductor (HK) Limited GD25LQ20CE2GR	80 µs	3 ms	2.1 V	1.65 V	Non-Volatile	FLASH	SPI - Quad I/O	8-USON (3x2)	7 ns	FLASH - NOR (SLC)	Surface Mount	256 K	8	90 MHz	2 Gbit	105 °C	-40 °C	8-XFDFN Exposed Pad
GigaDevice Semiconductor (HK) Limited GD25LQ20CTIGR	50 µs	2.4 ms	2.1 V	1.65 V	Non-Volatile	FLASH	SPI - Quad I/O	8-SOP		FLASH - NOR	Surface Mount	256 K	8	104 MHz	2 Gbit	85 °C	-40 °C	8-SOIC	3.9 mm	0.154 in