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30 V, N-channel Trench MOSFET
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Package Name | Current - Continuous Drain (Id) (Ta) | Gate Charge (Max) | Power Dissipation (Max) | Technology | FET Type | Drain to Source Voltage (Vdss) | Rds On (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Vgs(th) (Max) | Package / Case | Vgs (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Mounting Type | Input Capacitance (Ciss) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | TO-236AB | 3 A | 5.5 nC | 460 mW | MOSFET (Metal Oxide) | N-Channel | 30 V | 72 mOhm | -55 °C | 150 °C | 2.5 V | SC-59 SOT-23-3 TO-236-3 | 20 V | 10 V | 4.5 V | Surface Mount | 160 pF |