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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Input Capacitance (Ciss) (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Drain to Source Voltage (Vdss) | Package Name | Qualification | Vgs(th) (Max) | FET Type | Vgs (Max) | Rds On (Max) | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Grade | Gate Charge (Max) | Power Dissipation (Max) | Package / Case | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 1025 pF | 2.5 V | 8 V | 18 A | 6 A | 20 V | DFN2020MD-6 | AEC-Q101 | 1.3 V | P-Channel | 12 V | 33 mOhm | Surface Mount | -55 °C | 175 °C | Automotive | 16 nC | 2 W 19 W | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) |