Catalog
60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Grade | Technology | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package / Case | Mounting Type | Vgs (Max) | Qualification | FET Type | Operating Temperature | Current - Continuous Drain (Id) | Drain to Source Voltage (Vdss) | Gate Charge (Max) | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Automotive | MOSFET (Metal Oxide) | 10 V | 2.5 V | SC-59 SOT-23-3 TO-236-3 | Surface Mount | 20 V | AEC-Q101 | N-Channel | 175 °C | 250 mA | 60 V | 0.21 nC | TO-236AB |