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OPTIMOS™ N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 1.8 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE
| Part | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Technology | Supplier Device Package | FET Type | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8-PowerTDFN | -55 °C | 150 °C | Surface Mount | 20 V | 1.8 mOhm | 4.5 V 10 V | 2500 pF | 2 V | 29 A 100 A | 25 V | 2.5 W 69 W | MOSFET (Metal Oxide) | PG-TDSON-8-6 | N-Channel | 36 nC |