DMN1006UCA6 Series

12V N-Channel Enhancement Mode MOSFET

Catalog

12V N-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Power - Max [Max]	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMN1006UCA6-7	-55 °C	150 °C	Surface Mount	1.3 V	6-SMD No Lead	2.4 W	2 N-Channel (Dual)	2360 pF	X3-DSN2718-6	MOSFET (Metal Oxide)	35.2 nC

Catalog

12V N-Channel Enhancement Mode MOSFET

Key Features

• CSP with Footprint 2.70mm × 1.81mm

• Height = 0.21mm for Low Profile

• ESD Protection of Gate

Description

This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.