S4PM Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 4A TO277A
| Part | Capacitance | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) | Package / Case | Voltage - Forward (Vf) (Max) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Package Name | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Speed - Recovery Time | Current - Reverse Leakage | Reverse Recovery Time (trr) | Technology | Grade | Mounting Type | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 30 pF | 4 A | 1 kV | 3-PowerDFN TO-277 | 1.1 V | 150 °C | -55 °C | TO-277A (SMPC) | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 10 µA | 2.5 µs | Standard | Automotive | Surface Mount | AEC-Q101 |
Vishay General Semiconductor - Diodes Division | 30 pF | 4 A | 1 kV | 3-PowerDFN TO-277 | 1.1 V | 150 °C | -55 °C | TO-277A (SMPC) | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 10 µA | 2.5 µs | Standard | Automotive | Surface Mount | AEC-Q101 |