MOSFET N-CH 85V 200A TO263
| Part | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Power Dissipation (Max) | Mounting Type | Technology | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 7600 pF | N-Channel | 480 W | Surface Mount | MOSFET (Metal Oxide) | 4 V | 200 A | 20 V | 152 nC | 85 V | -55 °C | 175 ░C | 5 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | TO-263AA | ||
IXYS | 6800 pF | N-Channel | Surface Mount | MOSFET (Metal Oxide) | 4 V | 200 A | 20 V | 75 V | -55 °C | 175 ░C | 5 mOhm | D2PAK TO-263-7 | 10 V | TO-263-7 (IXTA) | 160 nC | 430 W | ||
IXYS | 7600 pF | N-Channel | 480 W | Surface Mount | MOSFET (Metal Oxide) | 4 V | 200 A | 20 V | 152 nC | 85 V | -55 °C | 175 ░C | 5 mOhm | D2PAK TO-263-7 | 10 V | TO-263-7 (IXTA) |