Catalog
P-CHANNEL ENHANCEMENT MODE MOSFET
Description
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TN1.pdf
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P-CHANNEL ENHANCEMENT MODE MOSFET
P-CHANNEL ENHANCEMENT MODE MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | FET Type | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 2.6 A | 251 pF | 1.5 V 4.5 V | 820 mW | U-WLB1010-4 | 12 V | Surface Mount | 4-UFBGA WLBGA | P-Channel | 102 mOhm | -55 °C | 150 °C | -5 V | 3.7 nC | MOSFET (Metal Oxide) | 1 V |