
Catalog
40 V, 0.5 A NPN low VCEsat (BISS) transistor
Description
AI
NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB.
40 V, 0.5 A NPN low VCEsat (BISS) transistor
| Part | Mounting Type | DC Current Gain (hFE) (Min) | Operating Temperature | Package / Case | Grade | Current - Collector Cutoff (Max) | Vce Saturation (Max) | Frequency - Transition | Qualification | Voltage - Collector Emitter Breakdown (Max) | Power - Max | Current - Collector (Ic) (Max) | Package Name | Transistor Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Surface Mount | 200 | 150 °C | 3-XFDFN | Automotive | 100 µA | 50 mV | 450 MHz | AEC-Q100 | 40 V | 250 mW | 500 mA | DFN1006B-3 | NPN |