IC FLASH 128MBIT SPI/QUAD 8SOP
| Part | Technology | Memory Size | Memory Interface | Clock Frequency | Package / Case [y] | Package / Case | Package / Case [x] | Voltage - Supply [Max] | Voltage - Supply [Min] | Supplier Device Package | Mounting Type | Memory Format | Write Cycle Time - Word, Page | Operating Temperature [Max] | Operating Temperature [Min] | Memory Type | Access Time | Memory Organization | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited GD25LQ128DS2GR | FLASH - NOR (SLC) | 128 Mb | QPI, Quad I/O, SPI | 104 MHz | 5.3 mm | 8-SOIC | 0.209 " | 2 V | 1.65 V | 8-SOP | Surface Mount | FLASH | 2.4 ms | 105 °C | -40 °C | Non-Volatile | 6 ns | 16M x 8 | ||
GigaDevice Semiconductor (HK) Limited GD25LQ128EWJGR | FLASH - NOR (SLC) | 128 Mb | SPI - Quad I/O | 120 MHz | 8-WDFN Exposed Pad | 2 V | 1.65 V | 8-WSON (5x6) | Surface Mount | FLASH | 105 °C | -40 °C | Non-Volatile | 6 ns | 16M x 8 | 60 µs | 2.4 ms | |||
GigaDevice Semiconductor (HK) Limited GD25LQ128EQIGR | FLASH - NOR (SLC) | 128 Mb | SPI - Quad I/O | 120 MHz | 8-XDFN Exposed Pad | 2 V | 1.65 V | 8-USON (4x4) | Surface Mount | FLASH | 85 °C | -40 °C | Non-Volatile | 6 ns | 16M x 8 | 60 µs | 2.4 ms | |||
GigaDevice Semiconductor (HK) Limited GD25LQ128DSAGR | FLASH - NOR (SLC) | 128 Mb | QPI, Quad I/O, SPI | 104 MHz | 5.3 mm | 8-SOIC | 0.209 " | 2 V | 1.65 V | 8-SOP | Surface Mount | FLASH | 4 ms | 125 °C | -40 °C | Non-Volatile | 6 ns | 16M x 8 | ||
GigaDevice Semiconductor (HK) Limited GD25LQ128EBIRY | FLASH - NOR (SLC) | 128 Mb | SPI - Quad I/O | 120 MHz | 24-TBGA | 2 V | 1.65 V | 24-TFBGA (6x8) | Surface Mount | FLASH | 85 °C | -40 °C | Non-Volatile | 6 ns | 16M x 8 | 60 µs | 2.4 ms | |||
GigaDevice Semiconductor (HK) Limited GD25LQ128EYJGR | FLASH - NOR (SLC) | 128 Mb | SPI - Quad I/O | 120 MHz | 8-WDFN Exposed Pad | 2 V | 1.65 V | 8-WSON (6x8) | Surface Mount | FLASH | 105 °C | -40 °C | Non-Volatile | 6 ns | 16M x 8 | 60 µs | 2.4 ms | |||
GigaDevice Semiconductor (HK) Limited GD25LQ128EQEGR | FLASH - NOR (SLC) | 128 Mb | SPI - Quad I/O | 120 MHz | 8-XDFN Exposed Pad | 2 V | 1.65 V | 8-USON (4x4) | Surface Mount | FLASH | 125 °C | -40 °C | Non-Volatile | 6 ns | 16M x 8 | 100 µs | 4 ms | |||
GigaDevice Semiconductor (HK) Limited GD25LQ128DW2GR | FLASH - NOR (SLC) | 128 Mb | QPI, Quad I/O, SPI | 104 MHz | 8-WDFN Exposed Pad | 2 V | 1.65 V | 8-WSON (5x6) | Surface Mount | FLASH | 2.4 ms | 105 °C | -40 °C | Non-Volatile | 6 ns | 16M x 8 | ||||
GigaDevice Semiconductor (HK) Limited GD25LQ128EFIRR | FLASH - NOR (SLC) | 128 Mb | SPI - Quad I/O | 120 MHz | 7.5 mm | 16-SOIC | 0.295 in | 2 V | 1.65 V | 16-SOP | Surface Mount | FLASH | 85 °C | -40 °C | Non-Volatile | 6 ns | 16M x 8 | 60 µs | 2.4 ms | |
GigaDevice Semiconductor (HK) Limited GD25LQ128DSIGR | FLASH - NOR | 128 Mb | SPI - Quad I/O | 120 MHz | 5.3 mm | 8-SOIC | 0.209 " | 2 V | 1.65 V | 8-SOP | Surface Mount | FLASH | 2.4 ms | 85 °C | -40 °C | Non-Volatile | 16M x 8 |