IC FLASH 128MBIT SPI/QUAD 8SOP
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Memory Format | Package / Case [y] | Package / Case | Package / Case [x] | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Clock Frequency | Technology | Supplier Device Package | Memory Size | Voltage - Supply [Max] | Voltage - Supply [Min] | Mounting Type | Access Time | Memory Interface | Memory Organization | Memory Type | Write Cycle Time - Word, Page | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited  | 105 °C  | -40 °C  | FLASH  | 5.3 mm  | 8-SOIC  | 0.209 "  | 60 µs  | 2.4 ms  | 120 MHz  | FLASH - NOR (SLC)  | 8-SOP  | 128 Mb  | 2 V  | 1.65 V  | Surface Mount  | 6 ns  | SPI - Quad I/O  | 16M x 8  | Non-Volatile  | |
GigaDevice Semiconductor (HK) Limited  | 105 °C  | -40 °C  | FLASH  | 5.3 mm  | 8-SOIC  | 0.209 "  | 104 MHz  | FLASH - NOR (SLC)  | 8-SOP  | 128 Mb  | 2 V  | 1.65 V  | Surface Mount  | 6 ns  | QPI  Quad I/O  SPI  | 16M x 8  | Non-Volatile  | 2.4 ms  | ||
GigaDevice Semiconductor (HK) Limited  | 125 °C  | -40 °C  | FLASH  | 8-XDFN Exposed Pad  | 100 µs  | 4 ms  | 120 MHz  | FLASH - NOR (SLC)  | 8-USON (4x4)  | 128 Mb  | 2 V  | 1.65 V  | Surface Mount  | 6 ns  | SPI - Quad I/O  | 16M x 8  | Non-Volatile  | |||
GigaDevice Semiconductor (HK) Limited  | 105 °C  | -40 °C  | FLASH  | 8-WDFN Exposed Pad  | 104 MHz  | FLASH - NOR (SLC)  | 8-WSON (6x8)  | 128 Mb  | 2 V  | 1.65 V  | Surface Mount  | 6 ns  | QPI  Quad I/O  SPI  | 16M x 8  | Non-Volatile  | 2.4 ms  | ||||
GigaDevice Semiconductor (HK) Limited  | 85 °C  | -40 °C  | FLASH  | 5.3 mm  | 8-SOIC  | 0.209 "  | 120 MHz  | FLASH - NOR  | 8-SOP  | 128 Mb  | 2 V  | 1.65 V  | Surface Mount  | SPI - Quad I/O  | 16M x 8  | Non-Volatile  | 2.4 ms  | |||
GigaDevice Semiconductor (HK) Limited  | 105 °C  | -40 °C  | FLASH  | 8-WDFN Exposed Pad  | 104 MHz  | FLASH - NOR (SLC)  | 8-WSON (5x6)  | 128 Mb  | 2 V  | 1.65 V  | Surface Mount  | 6 ns  | QPI  Quad I/O  SPI  | 16M x 8  | Non-Volatile  | 2.4 ms  | ||||
GigaDevice Semiconductor (HK) Limited  | 105 °C  | -40 °C  | FLASH  | 7.5 mm  | 16-SOIC  | 0.295 in  | 60 µs  | 2.4 ms  | 120 MHz  | FLASH - NOR (SLC)  | 16-SOP  | 128 Mb  | 2 V  | 1.65 V  | Surface Mount  | 6 ns  | SPI - Quad I/O  | 16M x 8  | Non-Volatile  | |
GigaDevice Semiconductor (HK) Limited  | 85 °C  | -40 °C  | FLASH  | 8-XDFN Exposed Pad  | 60 µs  | 2.4 ms  | 120 MHz  | FLASH - NOR (SLC)  | 8-USON (4x4)  | 128 Mb  | 2 V  | 1.65 V  | Surface Mount  | 6 ns  | SPI - Quad I/O  | 16M x 8  | Non-Volatile  | |||
GigaDevice Semiconductor (HK) Limited  | 125 °C  | -40 °C  | FLASH  | 24-TBGA  | 104 MHz  | FLASH - NOR (SLC)  | 24-TFBGA (6x8)  | 128 Mb  | 2 V  | 1.65 V  | Surface Mount  | 6 ns  | QPI  Quad I/O  SPI  | 16M x 8  | Non-Volatile  | 4 ms  | ||||
GigaDevice Semiconductor (HK) Limited  | 105 °C  | -40 °C  | FLASH  | 8-WDFN Exposed Pad  | 60 µs  | 2.4 ms  | 120 MHz  | FLASH - NOR (SLC)  | 8-WSON (6x8)  | 128 Mb  | 2 V  | 1.65 V  | Surface Mount  | 6 ns  | SPI - Quad I/O  | 16M x 8  | Non-Volatile  |