GNP1070 Series
EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
Manufacturer: Rohm Semiconductor
Catalog
EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
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EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
| Part | Package Name | Input Capacitance (Ciss) (Max) | Rds On (Max) | Current - Continuous Drain (Id) (Tc) | Gate Charge (Max) | Vgs(th) (Max) | Package / Case | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Technology | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Operating Temperature | FET Type | Mounting Type | Vgs (Max) Positive | Vgs (Max) Negative |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | DFN8080K | 200 pF | 98 mOhm | 20 A | 5.2 nC | 2.4 V | 8-PowerDFN | 56 W | 650 V | GaNFET (Gallium Nitride) | 5.5 V | 5 V | 150 °C | N-Channel | Surface Mount | 6 V | -10 V |