STW48N60M2 Series

N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package

Catalog

N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]
STMicroelectronics STW48N60M2	10 V	42 A	Through Hole	-55 °C	150 °C	70 mOhm	25 V	3060 pF	TO-247-3	TO-247-3	N-Channel	70 nC	MOSFET (Metal Oxide)	600 V	4 V	300 W

Catalog

N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package

Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.