DMTH4014LPSW Series

40V +175°C N-Channel Enhancement Mode MOSFET

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Vgs (Max)	Package / Case	FET Type
Diodes Inc DMTH4014LPSW-13	MOSFET (Metal Oxide)	750 pF	-55 °C	175 ░C	43.5 A	4 W 46.9 W	PowerDI5060-8 (Type UX)	11.2 nC	3 V	4.5 V 10 V	40 V	14.5 mOhm	Surface Mount Wettable Flank	20 V	8-PowerTDFN	N-Channel

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient TemperatureEnvironments

• 100% Unclamped Inductive Switching (UIS) Test in Production —Ensures More Reliable and Robust End Application

• High Conversion Efficiency

• Low RDS(ON) — Minimizes Power Losses

• Wettable Flank for Improved Optical Inspection

• Fast Switching Speed

• Low Input Capacitance

• Lead-Free Finish; RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.