PMWD19 Series
Manufacturer: NXP USA Inc.
MOSFET 2N-CH 30V 5.6A 8TSSOP
| Part | Package Length | Package Name | Package Width | Vgs(th) (Max) | Power - Max | Drain to Source Voltage (Vdss) | Technology | Gate Charge (Max) | Input Capacitance (Ciss) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Channel Count | Configuration | Configuration - Features | Rds On (Max) | Current - Continuous Drain (Id) | Mounting Type | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP USA Inc. | 0.173 in | 8-TSSOP | 4.4 mm | 700 mV | 2.3 W | 30 V | MOSFET (Metal Oxide) | 28 nC | 1478 pF | -55 °C | 150 °C | 2 | N-Channel | Dual | 23 mOhm | 5.6 A | Surface Mount | Logic Level Gate |