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30 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) (Ta) | Power Dissipation (Max) | Gate Charge (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs(th) (Max) | FET Type | Vgs (Max) | Technology | Operating Temperature (Min) | Operating Temperature (Max) | Input Capacitance (Ciss) (Max) | Rds On (Max) | Package Name | Package / Case | Mounting Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 5.3 A | 1.2 W 480 mW | 19.2 nC | 10 V | 4.5 V | 3 V | P-Channel | 20 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | 793 pF | 45 mOhm | TO-236AB | SC-59 SOT-23-3 TO-236-3 | Surface Mount | 30 V |