1SD418F2 Series
Manufacturer: POWER INTEGRATIONS
IC GATE DRVR HALF-BRIDGE MODULE
| Part | Driven Configuration | Fall Time (Typ) | Rise Time (Typ) | Channel Type | Operating Temperature (Max) | Operating Temperature (Min) | Gate Channel | Gate Type | Package Name | Mounting Type | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Number of Drivers | Package / Case | Current - Peak Output (Sink) | Current - Peak Output (Source) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
POWER INTEGRATIONS | Half-Bridge | 100 ns | 100 ns | Single | 85 °C | -40 °C | N-Channel P-Channel | IGBT MOSFET | Module | Chassis Mount | 14.5 V | 15.5 V | 1 | Module | ||
POWER INTEGRATIONS | Half-Bridge | 100 ns | 100 ns | Single | 85 °C | -40 °C | N-Channel P-Channel | IGBT MOSFET N-Channel P-Channel MOSFET | Module | Chassis Mount | 14.5 V | 15.5 V | 1 | Module | 18 A | 18 A |
POWER INTEGRATIONS | Half-Bridge | 100 ns | 100 ns | Single | 85 °C | -40 °C | N-Channel P-Channel | IGBT MOSFET N-Channel P-Channel MOSFET | Module | Chassis Mount | 14.5 V | 15.5 V | 1 | Module | ||
POWER INTEGRATIONS | Half-Bridge | 100 ns | 100 ns | Single | 85 °C | -40 °C | N-Channel P-Channel | IGBT MOSFET N-Channel P-Channel MOSFET | Module | Chassis Mount | 14.5 V | 15.5 V | 1 | Module | ||
POWER INTEGRATIONS | Half-Bridge | 100 ns | 100 ns | Single | 85 °C | -40 °C | N-Channel P-Channel | IGBT MOSFET N-Channel P-Channel MOSFET | Module | Chassis Mount | 14.5 V | 15.5 V | 1 | Module | ||
POWER INTEGRATIONS | Half-Bridge | 100 ns | 100 ns | Single | 85 °C | -40 °C | N-Channel P-Channel | IGBT MOSFET N-Channel P-Channel MOSFET | Module | Chassis Mount | 14.5 V | 15.5 V | 1 | Module | ||
POWER INTEGRATIONS | Half-Bridge | 100 ns | 100 ns | Single | 85 °C | -40 °C | N-Channel P-Channel | IGBT MOSFET N-Channel P-Channel MOSFET | Module | Chassis Mount | 14.5 V | 15.5 V | 1 | Module | ||
POWER INTEGRATIONS | Half-Bridge | 100 ns | 100 ns | Single | 85 °C | -40 °C | N-Channel P-Channel | IGBT MOSFET N-Channel P-Channel MOSFET | Module | Chassis Mount | 14.5 V | 15.5 V | 1 | Module | 18 A | 18 A |
POWER INTEGRATIONS | Half-Bridge | 100 ns | 100 ns | Single | 85 °C | -40 °C | N-Channel P-Channel | IGBT MOSFET N-Channel P-Channel MOSFET | Module | Chassis Mount | 14.5 V | 15.5 V | 1 | Module | ||
POWER INTEGRATIONS | Half-Bridge | 100 ns | 100 ns | Single | 85 °C | -40 °C | N-Channel P-Channel | IGBT MOSFET N-Channel P-Channel MOSFET | Module | Chassis Mount | 14.5 V | 15.5 V | 1 | Module |