IRS2117 Series
Manufacturer: INFINEON
Beta
⌘K
IC GATE DRVR HIGH-SIDE 8DIP
| Part | Gate Type | Input Type | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Operating Temperature (Min) | Operating Temperature (Max) | Logic Voltage - VIH | Logic Voltage - VIL | Package Length | Package Name | Package Width | Fall Time (Typ) | Rise Time (Typ) | Current - Peak Output (Sink) | Current - Peak Output (Source) | High Side Voltage - Max (Bootstrap) | Number of Drivers | Gate Channel | Driven Configuration | Mounting Type | Channel Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | IGBT MOSFET N-Channel MOSFET | Non-Inverting | 10 VDC | 20 V | -40 °C | 150 °C | 9.5 V | 6 V | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | 35 ns | 75 ns | 600 mA | 290 mA | 600 V | 1 | N-Channel | High-Side | Through Hole | Single |
 INFINEON | IGBT MOSFET N-Channel MOSFET | Non-Inverting | 10 VDC | 20 V | -40 °C | 150 °C | 9.5 V | 6 V | 0.154 in | 8-SOIC | 3.9 mm | 35 ns | 75 ns | 600 mA | 290 mA | 600 V | 1 | N-Channel | High-Side | Surface Mount | Single |
INFINEON | IGBT MOSFET N-Channel MOSFET | Non-Inverting | 10 VDC | 20 V | -40 °C | 150 °C | 9.5 V | 6 V | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | 35 ns | 75 ns | 600 mA | 290 mA | 600 V | 1 | N-Channel | High-Side | Through Hole | Single |
 INFINEON | IGBT MOSFET N-Channel MOSFET | Non-Inverting | 10 VDC | 20 V | -40 °C | 150 °C | 9.5 V | 6 V | 0.154 in | 8-SOIC | 3.9 mm | 35 ns | 75 ns | 600 mA | 290 mA | 600 V | 1 | N-Channel | High-Side | Surface Mount | Single |