Catalog
N-Channel Enhancement Mode MOSFET
Beta
⌘K
N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Vgs(th) (Max) @ Id | FET Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 12 V | 3.8 nC | 760 mW | 2.5 V 4.5 V | MOSFET (Metal Oxide) | 1.4 V | N-Channel | 20 V | SOT-23-3 | -55 °C | 150 °C | 3.4 A | 292 pF | SC-59 SOT-23-3 TO-236-3 | Surface Mount |
Diodes Inc | 12 V | 3.8 nC | 760 mW | 2.5 V 4.5 V | MOSFET (Metal Oxide) | 1.4 V | N-Channel | 20 V | SOT-23-3 | -55 °C | 150 °C | 3.4 A | 292 pF | SC-59 SOT-23-3 TO-236-3 | Surface Mount |