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12 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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12 V, P-channel Trench MOSFET
12 V, P-channel Trench MOSFET
| Part | Gate Charge (Max) | Rds On (Max) | Package Name | FET Type | Technology | Power Dissipation (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs(th) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Mounting Type | Input Capacitance (Ciss) (Max) | Vgs (Max) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 110 nC | 3.7 mOhm | MLPAK33 | P-Channel | MOSFET (Metal Oxide) | 1.8 W 50 W | 4.5 V | 1.8 V | 900 mV | -55 °C | 150 °C | 12 V | 98.6 A | 18.7 A | Surface Mount | 6500 pF | 8 V | 8-PowerVDFN |