ISZ56DP15 Series
Manufacturer: INFINEON
Beta
⌘K
P-CHANNEL MOSFETS IN LOGIC LEVEL, REDUCING DESIGN COMPLEXITY IN MEDIUM AND LOW POWER APPLICATIONS
| Part | Power Dissipation (Max) | Rds On (Max) | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Package Name | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Vgs(th) (Max) | Technology | FET Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package / Case | Mounting Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 2.5 W 62.5 W | 560 mOhm | 1.35 A | 6.7 A | PG-TSDSON-8 FL | 40 nC | -55 °C | 175 °C | 2 V | MOSFET (Metal Oxide) | P-Channel | 10 V | 4.5 V | 8-PowerTDFN | Surface Mount | 150 V | 1400 pF | 20 V |