NRND = Not Recommended for New Design
NRND = Not Recommended for New Design
| Part | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Package / Case | Rds On (Max) @ Id, Vgs | Mounting Type | Power - Max [Max] | Vgs(th) (Max) @ Id | FET Feature | Drain to Source Voltage (Vdss) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Configuration | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | FET Type | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | SOT-26 | 6.5 A | SOT-23-6 | 24 mOhm | Surface Mount | 850 mW | 900 mV | Logic Level Gate | 20 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | 8.8 nC | 2 N-Channel (Dual) Common Drain | |||||||
Diodes Inc | SOT-23-3 | 6.5 A | SC-59 SOT-23-3 TO-236-3 | 25 mOhm | Surface Mount | 900 mV | 20 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | 12 V | 8.5 nC | 151 pF | 1.8 V 4.5 V | 1.3 W | N-Channel | |||||
Diodes Inc | 6.5 A | Surface Mount | 1.5 V | 20 V | MOSFET (Metal Oxide) | 8.5 nC | 151 pF | 1.8 V 4.5 V | N-Channel | 36 mOhm |