TSM4N90 Series
Manufacturer: Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 900V 4A TO220
| Part | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) (Tc) | Vgs (Max) | Input Capacitance (Ciss) (Max) | Package / Case | Vgs(th) (Max) | Rds On (Max) | FET Type | Mounting Type | Technology | Package Name | Power Dissipation (Max) | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 900 V | -55 °C | 150 °C | 10 V | 4 A | 30 V | 955 pF | TO-220-3 | 4 V | 4 Ohm | N-Channel | Through Hole | MOSFET (Metal Oxide) | TO-220 | 38.7 W | 25 nC |