Catalog
NRND = Not Recommended for New Design
Description
AI
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
NRND = Not Recommended for New Design
NRND = Not Recommended for New Design
| Part | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Technology | Mounting Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | FET Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 6-UDFN Exposed Pad | 4.5 V 10 V | 820 mW | MOSFET (Metal Oxide) | Surface Mount | U-DFN2020-6 (Type F) | 14 nC | 9.1 A | 50 V | -55 °C | 150 °C | 2 V | N-Channel | 16 V | 902.7 pF | 15 mOhm |