-20V, -6.4A, SINGLE P-CHANNEL PO
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | FET Type | Rds On (Max) @ Id, Vgs | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 19 nC | 2.5 W | P-Channel | 40 mOhm | 8-SOP | -55 °C | 150 °C | Surface Mount | 6.4 A | MOSFET (Metal Oxide) | 20 V | 1 V | 8-SOIC | 3.9 mm | 0.154 in | 2.5 V 4.5 V | 8 V | 1020 pF |
Taiwan Semiconductor Corporation | 19 nC | 2.5 W | P-Channel | 40 mOhm | 8-SOP | -55 °C | 150 °C | Surface Mount | 6.4 A | MOSFET (Metal Oxide) | 20 V | 1 V | 8-SOIC | 3.9 mm | 0.154 in | 2.5 V 4.5 V | 8 V | 1020 pF |