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DIODE SIL CARB 650V 11A TO2522
| Part | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Package / Case | Capacitance @ Vr, F | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology | Supplier Device Package | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Wolfspeed | 1.8 V | 50 µA | 11 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 155 pF | 200 mA 500 ns | 175 ░C | -55 C | SiC (Silicon Carbide) Schottky | TO-252-2 | Surface Mount | 650 V | ||
Wolfspeed | 1.8 V | 50 µA | 11 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 155 pF | 175 ░C | -55 C | SiC (Silicon Carbide) Schottky | TO-252-2 | Surface Mount | 650 V | 0 ns | No Recovery Time |