MSRTA500160 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 1.6KV 3TOWER
| Part | Technology | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Speed - Recovery Time | Mounting Type | Voltage - Forward (Vf) (Max) | Package / Case | Current - Average Rectified (Io) (per Diode) | Package Name | Current - Reverse Leakage | Diode Pair Count | Diode Configuration | Voltage - DC Reverse (Vr) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Standard | 150 °C | -55 °C | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | Chassis Mount | 1.2 V | Three Tower | 500 A | Three Tower | 25 µA | 1 pair | Common Cathode | 1600 V |
GeneSiC Semiconductor |