IR2132 Series
Manufacturer: INFINEON
EICEDRIVER™ 600 V THREE PHASE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PLCC44 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: FAULT REPORTING, OPERATIONAL AMPLIFIER, OVER-CURRENT PROTECTION (ITRIP), SEPARATE PIN FOR LOGIC GROUND, SHOOT THROUGH PROTECTION
| Part | High Side Voltage - Max (Bootstrap) | Operating Temperature (Min) | Operating Temperature (Max) | Number of Drivers | Channel Type | Package Leads | Package Name | Input Type | Package Width | Package Length | Gate Channel | Gate Type | Mounting Type | Logic Voltage - VIL | Logic Voltage - VIH | Current - Peak Output (Sink) | Current - Peak Output (Source) | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Rise Time (Typ) | Fall Time (Typ) | Driven Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 600 V | -40 °C | 150 °C | 6 | 3-Phase | 32 Leads | 32 Leads 44-LCC (J-Lead) | Inverting | 16.58 mm | 16.58 mm | N-Channel | IGBT MOSFET N-Channel MOSFET | Surface Mount | 0.8 V | 2.2 V | 500 mA | 250 mA | 10 VDC | 20 V | 80 ns | 35 ns | Half-Bridge |
INFINEON | 600 V | -40 °C | 150 °C | 6 | 3-Phase | 28-SOIC | Inverting | 7.5 mm | 0.295 in | N-Channel | IGBT MOSFET N-Channel MOSFET | Surface Mount | 0.8 V | 2.2 V | 500 mA | 250 mA | 10 VDC | 20 V | 80 ns | 35 ns | Half-Bridge | |
INFINEON | 600 V | -40 °C | 150 °C | 6 | 3-Phase | 28-SOIC | Inverting | 7.5 mm | 0.295 in | N-Channel | IGBT MOSFET N-Channel MOSFET | Surface Mount | 0.8 V | 2.2 V | 500 mA | 250 mA | 10 VDC | 20 V | 80 ns | 35 ns | Half-Bridge | |
INFINEON | 600 V | -40 °C | 150 °C | 6 | 3-Phase | 32 Leads | 32 Leads 44-LCC (J-Lead) | Inverting | 16.58 mm | 16.58 mm | N-Channel | IGBT MOSFET N-Channel MOSFET | Surface Mount | 0.8 V | 2.2 V | 500 mA | 250 mA | 10 VDC | 20 V | 80 ns | 35 ns | Half-Bridge |
INFINEON | 600 V | -40 °C | 150 °C | 6 | 3-Phase | 28-SOIC | Inverting | 7.5 mm | 0.295 in | N-Channel | IGBT MOSFET N-Channel MOSFET | Surface Mount | 0.8 V | 2.2 V | 500 mA | 250 mA | 10 VDC | 20 V | 80 ns | 35 ns | Half-Bridge | |
INFINEON | 600 V | -40 °C | 150 °C | 6 | 3-Phase | 32 Leads | 32 Leads 44-LCC (J-Lead) | Inverting | 16.58 mm | 16.58 mm | N-Channel | IGBT MOSFET N-Channel MOSFET | Surface Mount | 0.8 V | 2.2 V | 500 mA | 250 mA | 10 VDC | 20 V | 80 ns | 35 ns | Half-Bridge |
INFINEON | 600 V | -40 °C | 150 °C | 6 | 3-Phase | 32 Leads | 32 Leads 44-LCC (J-Lead) | Inverting | 16.58 mm | 16.58 mm | N-Channel | IGBT MOSFET N-Channel MOSFET | Surface Mount | 0.8 V | 2.2 V | 500 mA | 250 mA | 10 VDC | 20 V | 80 ns | 35 ns | Half-Bridge |
INFINEON | 600 V | -40 °C | 150 °C | 6 | 3-Phase | 28-DIP 28-PDIP | Inverting | 15.24 mm | 0.6 in | N-Channel | IGBT MOSFET N-Channel MOSFET | Through Hole | 0.8 V | 2.2 V | 500 mA | 250 mA | 10 VDC | 20 V | 80 ns | 35 ns | Half-Bridge |