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MOSFET N-CH 60V 120A TO262-3
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Package / Case | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 120 A | PG-TO262-3 | 4 V | 165 nC | 60 V | Through Hole | 10 V | 3.2 mOhm | I2PAK TO-262-3 Long Leads TO-262AA | N-Channel | -55 °C | 175 ░C | 20 V | 13000 pF | 188 W |