STRONGIRFET™ N-CHANNEL ; DIRECTFET™ M PACKAGE; 2.2 MOHM;
| Part | Vgs(th) (Max) @ Id | Technology | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.35 V | MOSFET (Metal Oxide) | 2.8 W 100 W | 2.2 mOhm | Surface Mount | 20 V | 28 A 170 A | DirectFET™ Isometric MX | 150 °C | -40 °C | DirectFET™ Isometric MX | 42 nC | 4700 pF | N-Channel | 30 V | 4.5 V 10 V |