DMC2020USD Series

Complementary Pair Enhancement Mode MOSFET

Catalog

Complementary Pair Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Power - Max [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Configuration	FET Feature	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc DMC2020USD-13	1.5 V	1.8 W	20 V	20 mOhm	N and P-Channel	Logic Level Gate	MOSFET (Metal Oxide)	11.6 nC	8-SO	Surface Mount	8-SOIC	3.9 mm	0.154 in	1149 pF	-55 °C	150 °C

Catalog

Complementary Pair Enhancement Mode MOSFET

Key Features

• Reduced footprint with two discretes in a single SO8

• Low gate drive

• Low input capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected up to 2kV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found athttps://www.diodes.com/products/automotive/automotiveproducts/.

• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.