STP19NM50N Series

N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220

Catalog

N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type
STMicroelectronics STP19NM50N	4 V	TO-220	250 mOhm	25 V	14 A	MOSFET (Metal Oxide)	N-Channel	1000 pF	150 °C	10 V	110 W	34 nC	TO-220-3	500 V	Through Hole

Catalog

N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.