VEC2315 Series

Dual P-Channel Power MOSFET, -60V, -2.5A, 137mΩ

Catalog

Dual P-Channel Power MOSFET, -60V, -2.5A, 137mΩ

Part	Rds On (Max) @ Id, Vgs	Operating Temperature	Power - Max [Max]	Mounting Type	Technology	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package
ON Semiconductor VEC2315-TL-H	137 mOhm	150 °C	1 W	Surface Mount	MOSFET (Metal Oxide)	Logic Level Gate	11 nC	2 P-Channel	420 pF	60 V	SOT-28FL/VEC8

Catalog

Dual P-Channel Power MOSFET, -60V, -2.5A, 137mΩ

Key Features

• Low-Profile Package

• ESD Diode-Protected Gate

• RoHS Compliance

• Low On-Resistance

• 4V drive

Description

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.