POWER MOSFET, N CHANNEL, 100 V, 9.4 A, 0.21 OHM, TO-252AA, SURFACE MOUNT
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Package / Case | Drain to Source Voltage (Vdss) | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 9.4 A | 210 mOhm | N-Channel | 330 pF | Surface Mount | 48 W | 10 V | 25 nC | 4 V | TO-252AA (DPAK) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 100 V | 20 V | -55 °C | 175 ░C | |
Infineon Technologies | MOSFET (Metal Oxide) | 9.4 A | 210 mOhm | N-Channel | 330 pF | Surface Mount | 48 W | 10 V | 25 nC | 4 V | PG-TO252-3 | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 100 V | 20 V | -55 °C | 175 ░C | |
Infineon Technologies | MOSFET (Metal Oxide) | 8.7 A | 190 mOhm | N-Channel | 310 pF | Surface Mount | 10 V | 10 nC | 4 V | TO-252AA (DPAK) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 100 V | 20 V | -55 °C | 175 ░C | 35 W |