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MOSFET P-CH 20V 3.9A SOT23F
| Part | Mounting Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) [Max] | Vgs (Max) [Min] | FET Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Technology | Operating Temperature | Supplier Device Package | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Surface Mount | 1 V | 4.6 nC | 290 pF | 6 V | -8 V | P-Channel | 3.9 A | 1.5 V 4.5 V | MOSFET (Metal Oxide) | 150 °C | SOT-23F | 93 mOhm | 1 W | 20 V | SOT-23-3 Flat Leads |